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AO4611 View Datasheet(PDF) - Unspecified

Part NameDescriptionManufacturer
AO4611 60V Dual P + N-Channel MOSFET SHENZHENFREESCALE
Unspecified 
AO4611 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
AO4611
60V Dual P + N-Channel MOSFET
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
IDSS
Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
VGS=10V, ID=6.3A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=5.7A
gFS
Forward Transconductance
VDS=5V, ID=6.3A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=30V, ID=6.3A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=4.7,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=6.3A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/µs
Typ Max Units
V
1
µA
5
100 nA
2.1
3
V
A
20
25
m
34
42
22
30 m
27
S
0.74 1
V
3
A
1920 2300 pF
155
pF
116
pF
0.65 0.8
47.6 58 nC
24.2 30 nC
6
nC
14.4
nC
7.6
ns
5
ns
28.9
ns
5.5
ns
33.2 40
ns
43
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev5: Nov. 2010
2/7
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