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AO4611 View Datasheet(PDF) - Unspecified

Part NameDescriptionManufacturer
AO4611 60V Dual P + N-Channel MOSFET SHENZHENFREESCALE
Unspecified 
AO4611 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
AO4611
60V Dual P + N-Channel MOSFET
General Description
The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may be used to form a level shifted high side switch,
and for a host of other applications.
Features
N-Channel
VDS (V) = 60V
ID = 6.3A (VGS=10V)
RDS(ON)
< 25m(VGS=10V)
< 30m(VGS=4.5V)
P-Channel
-60V
-4.9A
< 42m(VGS = -10V)
< 52m(VGS = -4.5V)
SOIC-8
D2
D1
Top View
S2
D2
G2
D2
S1
D1
G1
D1 G2
G1
S2
S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain TA=25°C
6.3
Current A
TA=70°C
ID
5
Pulsed Drain Current B
IDM
40
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.28
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-60
±20
-4.9
-3.9
-30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Symbol Device
Typ
t 10s
Steady-State
RθJA
n-ch
n-ch
48
74
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t 10s
Steady-State
RθJL
n-ch
35
RθJA
p-ch
p-ch
48
74
Maximum Junction-to-Lead C
Steady-State
RθJL
p-ch
35
Max
Units
62.5
°C/W
110
°C/W
60
°C/W
62.5
°C/W
110
°C/W
40
°C/W
1/7
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