AO4852 View Datasheet(PDF) - Alpha and Omega Semiconductor
Part Name
Description
View to exact match
AO4852 Datasheet PDF : 4 Pages
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AO4852
60V Dual N-Channel MOSFET
General Description
The AO4852 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. As a pair
these MOSFETs operate very efficiently in Push Pull
and Bridge topologies.
Product Summary
VDS (V) = 60V
ID = 3.5A
(VGS = 10V)
RDS(ON) <90mΩ (VGS = 10V)
RDS(ON) <105mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Pin1
D1
D2
Top View
S2 1
8 D2
G2 2
7 D2
S1 3
6 D1
G1 4
5
D1
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Maximum
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain TA=25°C
3.5
3
Current A
TA=70°C
ID
2.8
2.4
Pulsed Drain Current B
IDM
20
Power Dissipation
TA=25°C
TA=70°C
PD
Avalanche Current B
IAR
Repetitive avalanche energy 0.3mH B
EAR
2
1.4
1.3
0.9
8
9.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
Max
48
62.5
74
90
33
40
Units
°C/W
°C/W
°C/W
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