AO4452 View Datasheet(PDF) - Unspecified
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AO4452 Datasheet PDF : 6 Pages
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AO4452
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
Single Pulse
PD
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
1000
300
15
250
di/dt=800A/µs
125ºC
12
Irm
200
25ºC
9
150
125ºC
6
100
Qrr
3
25ºC
50
0
0
5
10 15 20 25 30
IS (A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
150
30
Is=20A
120
90
60
Qrr
125ºC
26
25ºC
22
18
125ºC
14
10
30
Irm
6
25ºC
2
0
-2
0
200 400 600 800 1000
di/dt (A/µs)
Figure 15: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
24
2
di/dt=800A/µs
125ºC
20
1.6
16
trr
25ºC
1.2
12
8
4S
0.8
125ºC
0.4
25ºC
0
0
0
5
10
15
20
25
30
IS (A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
30
trr
25
40
20
15
25ºC
125ºC
3
Is=20A
2
10
25ºC
125ºC
1
5
S
0
0
0
200
400
600
800
1000
di/dt (A/µs)
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
5/6
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