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AO4452 Ver la hoja de datos (PDF) - Unspecified

Número de pieza
componentes Descripción
fabricante
AO4452
SHENZHENFREESCALE
Unspecified 
AO4452 Datasheet PDF : 6 Pages
1 2 3 4 5 6
AO4452
100V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
IDSS
Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
10
µA
50
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
2
3.2
4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8A
TJ=125°C
20.5 25
m
36
43
VGS=7V, ID=6.5A
25
31 m
gFS
Forward Transconductance
VDS=5V, ID=8A
23
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.66 1
V
IS
Maximum Body-Diode Continuous Current
5
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1400 1770 2200 pF
115 165 215 pF
33
55
80
pF
0.3 0.65 1.0
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=8A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=6,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
14
28
42
nC
4
9
14 nC
6
10
14
nC
12
ns
4
ns
17
ns
5
ns
11
16
21
ns
42
60
78
nC
21
27
33
ns
20
28
36
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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