AO4440 View Datasheet(PDF) -

AO4440

60V N-Channel MOSFET

N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

60

IDSS

Zero Gate Voltage Drain Current

VDS=48V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1

ID(ON)

On state drain current

VGS=10V, VDS=5V

20

VGS=10V, ID=5A

RDS(ON) Static Drain-Source On-Resistance

TJ=125°C

VGS=4.5V, ID=4A

gFS

Forward Transconductance

VDS=5V, ID=5A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=30V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg(10V)

Qg(4.5V)

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Total Gate Charge

Gate Source Charge

VGS=10V, VDS=30V, ID=5A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=30V, RL=6Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs

Typ

2.3

42

75

54

11

0.78

450

60

25

1.65

8.5

4.3

1.6

2.2

5.1

2.6

15.9

2

25.1

28.7

Max Units

V

1

µA

5

100 nA

3

V

A

55

mΩ

75 mΩ

S

1

V

4

A

540 pF

pF

pF

2

Ω

10.5 nC

5.5 nC

nC

nC

7

ns

4

ns

20

ns

3

ns

35

ns

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating. Rev2: Nov. 2010

2/4

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