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AO4413 View Datasheet(PDF) - Unspecified

Part Name
Description
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AO4413 Datasheet PDF : 6 Pages
1 2 3 4 5 6
AO4413
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4413 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V
ID = -15A
RDS(ON) < 7m(VGS = -20V)
RDS(ON) < 8.5m(VGS = -10V)
SOIC-8
Top View
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±25
-15
-12.8
-80
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
RθJA
26
50
Maximum Junction-to-Lead C
Steady-State
RθJL
14
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/6
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