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AO3460 View Datasheet(PDF) - Unspecified

Part NameDescriptionManufacturer
AO3460 60V N-Channel MOSFET SHENZHENFREESCALE
Unspecified 
AO3460 Datasheet PDF : 4 Pages
1 2 3 4
AO3460
60V N-Channel MOSFET
General Description
The AO3460 uses advanced trench technology to provide excellent RDS(ON) , low gate charge, and
operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low current inverters and low current DC-DC converters.
It is ESD protected.
Features
VDS (V) = 60V
ID = 0.65A (VGS = 10V)
RDS(ON) < 1.7(VGS = 10V)
RDS(ON) < 2(VGS = 4.5V)
ESD protected
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A, F
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
0.65
0.5
1.6
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
RθJA
70
100
90
125
Maximum Junction-to-Lead C
Steady-State
RθJL
63
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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