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AO4446L View Datasheet(PDF) - Alpha and Omega Semiconductor

Part NameDescriptionManufacturer
AO4446L N-Channel Enhancement Mode Field Effect Transistor AOSMD
Alpha and Omega Semiconductor AOSMD
AO4446L Datasheet PDF : 4 Pages
1 2 3 4
AO4446
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4446 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
in PWM applications. Standard Product AO4446 is
Pb-free (meets ROHS & Sony 259 specifications).
AO4446L is a Green Product ordering option.
AO4446 and AO4446L are electrically identical.
Features
VDS (V) = 30V
ID = 15A (VGS = 10V)
RDS(ON) < 8.5m(VGS = 10V)
RDS(ON) < 14.5m(VGS = 4.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
Avalanche Current B
IAR
Repetitive avalanche energy L=0.1mH B
EAR
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
15
12
40
20
50
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
RθJA
33
59
40
75
Maximum Junction-to-Case C
Steady-State
RθJC
16
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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