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AO4440-V2 View Datasheet(PDF) - Alpha and Omega Semiconductor

Part NameDescriptionManufacturer
AO4440(V2) P-Channel Enhancement Mode Field Effect Transistor AOSMD
Alpha and Omega Semiconductor AOSMD
AO4440 Datasheet PDF : 4 Pages
1 2 3 4
AO4440
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
IDSS
Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
VGS=10V, ID=5A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=4A
gFS
Forward Transconductance
VDS=5V, ID=5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=30V, ID=5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=6,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
Typ
2.3
42
75
54
11
0.78
450
60
25
1.65
8.5
4.3
1.6
2.2
5.1
2.6
15.9
2
25.1
28.7
Max Units
V
1
µA
5
100 nA
3
V
A
55
m
75 m
S
1
V
4
A
540 pF
pF
pF
2
10.5 nC
5.5 nC
nC
nC
7
ns
4
ns
20
ns
3
ns
35
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating. Rev2: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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