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AN211A View Datasheet(PDF) - Motorola => Freescale

Part Name
Description
MFG CO.
AN211A Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
AN211A
Freescale Semiconductor, Inc.
ID
DEPLETION MODE IDSS
0.1 IDSS
- VGS(off) VGS 0
+
GATE VOLTAGE
GATE*
DRAIN DC
mA
DEPLETION MODE JFETs
CHARACTERISTIC
DESCRIPTION
SOURCE
VDS
TEST CIRCUIT FOR IDSS
IDSS @ VGS = 0,
VP < VDS < V(BR)DSS
ZeroĆgateĆvoltage drain current.
Represents maximum drain current. GATE*
DRAIN
DC
mA/µA
VGS(off) @ ID = 0.001 IDSS,
ID(off) VP < VDS < V(BR)DSS
VGS @ ID = 0.1 IDSS,
VP < VDS < V(BR)DSS
Gate voltage necessary to reduce
ID to some specified negligible value
at the recommended VDS i.e. cutoff.
Gate voltage for a specified value of
ID between IDSS and IDS at cutoff -
normally 0.1 IDSS.
VGS
SOURCE
VDS
TEST CIRCUIT FOR VGS AND VGS(off)
* GATES INTERNALLY CONNECTED
Ĕ ADJUST FOR DESIRED ID
ID
DEPLETION MODE
ENHANCEMENT MODE
ID(on)
IDSS
VGS(off)
VGS = 0
GATE VOLTAGE
DEPLETION/ENHANCEMENT MODE MOSFETs
DRAIN
CHARACTERISTIC
ID(on) @ VGS > 0,
VP < VDS < V(BR)DSS
IDSS @ VGS = 0,
VP < VDS < V(BR)DSS
VGS(off) @ ID = 0.001 IDSS
DESCRIPTION
DC
GATE
An arbitrary current value (usually near
mA
max rated current) that locates a point
in the enhancement operation mode.
ZeroĆgateĆvoltage drain current.
VGS
SOURCE VDS
TEST CIRCUIT FOR ID(on)
Voltage necessary to reduce ID to
some specified negligible value at
the recommended VDS, i.e. cutoff.
Ĕ ADJUST FOR DESIRED ID,
NORMALLY NEAR MAXĆRATED ID
TEST CIRCUIT FOR IDSS AND VGS(off)
ENHANCEMENT MODE MOSFETs
ENHANCEMENT MODE
ID
CHARACTERISTIC
DESCRIPTION
ID(on)
An arbitrary current value (usually near
ID(on) @ VGS > 0,
max rated current) that locates a point
VP < VDS < V(BR)DSS
in the enhancement operation mode.
ID(on) TEST CIRCUIT
SAME AS FOR DEPLETION/
ENHANCEMENT
VGS TEST CIRCUIT
SAME AS FOR ID(on)
0.1 ID(on) VGS @ 0.1 ID(on)
GateĆsource voltage for a specified
drain current of 0.1 ID(on) .
VGS(th) TEST CIRCUIT
SAME AS FOR VGS(off)
IDSS
0 VGS(th)
VGS
VGS(th) @ ID = 0.001
ID(on) or less
IDSS @ VGS = 0,
Gate cutoff or turnĆon voltage.
Leakage drain current.
FOR JFET EXCEPT
REVERSE VGS BATTERY
POLARITY
GATE VOLTAGE
VP < VDS < V(BR)DSS
IDSS TEST CIRCUIT
SAME AS FOR JFET
Figure 10. Static Characteristics for the Three FET Types Are Defined by the Above Curves, Tables, and Test Circuits
VGS(off)tVGS
VGS 
V(BR)DGO
2
GATE
DRAIN
VGS
nA/µA
SOURCE
Figure 11. Test Circuit for Leakage Current
6
For More InformMaOtiToOnROOLnATShEiMsICPOrNoDdUuCcTtO, R APPLICATION INFORMATION
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