AM29LV200BB50REF View Datasheet(PDF) - Advanced Micro Devices

Part Name

Description

View to exact match

AM29LV200BB50REF

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

DATA SHEET

DC CHARACTERISTICS

CMOS Compatible

Parameter

Description

Test Conditions

Min

Typ

ILI

Input Load Current

VIN = VSS to VCC,

VCC = VCC max

ILIT

A9 Input Load Current

VCC = VCC max; A9 = 12.5 V

ILO

Output Leakage Current

VOUT = VSS to VCC,

VCC = VCC max

CE# = VIL, OE# = VIH,

5 MHz

7

ICC1

VCC Active Read Current

(Notes 1, 2)

Byte Mode

CE# = VIL, OE# = VIH,

1 MHz

5 MHz

2

7

Word Mode

1 MHz

2

ICC2

VCC Active Write Current

(Notes 2, 3, and 5)

CE# = VIL, OE# = VIH

15

ICC3

VCC Standby Current (Note 2) CE#, RESET# = VCC±0.3 V

ICC4

VCC Reset Current (Note 2)

RESET# = VSS ± 0.3 V

ICC5

Automatic Sleep Mode (Notes 2, VIH = VCC ± 0.3 V;

4)

VIL = VSS ± 0.3 V

VIL

Input Low Voltage

VIH

Input High Voltage

VID

Voltage for Autoselect and

Temporary Sector Unprotect

VCC = 3.3 V

0.2

0.2

0.2

–0.5

0.7 x VCC

11.5

VOL

VOH1

VOH2

VLKO

Output Low Voltage

Output High Voltage

Low VCC Lock-Out Voltage

(Note 5)

IOL = 4.0 mA, VCC = VCC min

IOH = –2.0 mA, VCC = VCC min

IOH = –100 µA, VCC = VCC min

0.85 VCC

VCC–0.4

2.3

Notes:

1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.

2. Maximum ICC specifications are tested with VCC = VCCmax.

3. ICC active while Embedded Erase or Embedded Program is in progress.

4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.

5. Not 100% tested.

Max

Unit

±1.0

µA

35

µA

±1.0

µA

12

4

mA

12

4

30

mA

5

µA

5

µA

5

µA

0.8

V

VCC + 0.3 V

12.5

V

0.45

V

V

2.5

V

October 10, 2006 21521D6

Am29LV200B

25

Share Link: