ADSP-BF542/ADSP-BF544/ADSP-BF547/ADSP-BF548/ADSP-BF549
ELECTRICAL CHARACTERISTICS
Parameter
VOH
VOHDDR
VOL
VOLDDR
IIH
IIHP
IIHDDR_VREF
IIL8
IOZH9
IOZL11
CIN
IDDDEEPSLEEP13
IDDSLEEP
IDD-IDLE
Test Conditions
High Level Output
Voltage for 3.3 V I/O3
High Level Output
Voltage for 2.5 V I/O3
VDDEXT = 2.7 V,
IOH = –0.5 mA
VDDEXT = 2.25 V,
IOH = –0.5 mA
High Level Output
Voltage for DDR
SDRAM4
VDDDDR = 2.5 V,
IOH = –8.1 mA
High Level Output
Voltage for Mobile
DDR SDRAM4
VDDDDR = 1.8 V,
IOH = –0.1 mA
Low Level Output
Voltage for 3.3 V I/O3
Low Level Output
Voltage for 2.5 V I/O3
VDDEXT = 2.7 V,
IOL = 2.0 mA
VDDEXT = 2.25 V,
IOL = 2.0 mA
Low Level Output
Voltage for DDR
SDRAM4
VDDDDR = 2.5 V,
IOL = 8.1 mA
Low Level Output
Voltage for Mobile
DDR SDRAM4
VDDDDR = 1.8 V,
IOL = 0.1 mA
High Level Input
Current5
High Level Input
Current6
High Level Input
Current for DDR
SDRAM7
VDDEXT = 3.6 V,
VIN = VIN Max
VDDEXT = 3.6 V,
VIN = VIN Max
VDDDDR = 2.7 V,
VIN = 0.51 × VDDDDR
High Level Input
Current for Mobile
DDR SDRAM7
VDDDDR = 1.95 V,
VIN = 0.51 × VDDDDR
Low Level Input
Current
VDDEXT = 3.6 V, VIN = 0 V
Three-State Leakage
Current10
Three-State Leakage
Current10
VDDEXT = 3.6 V,
VIN = VIN Max
VDDEXT = 3.6 V, VIN = 0 V
Input Capacitance12
fIN = 1 MHz,
TAMBIENT = 25°C,
VIN = 2.5 V
VDDINT Current in Deep VDDINT = 1.0 V,
Sleep Mode
fCCLK = 0 MHz,
fSCLK = 0 MHz,
TJ = 25°C, ASF = 0.00
VDDINT Current in Sleep VDDINT = 1.0 V,
Mode
fSCLK = 25 MHz,
TJ = 25°C
VDDINT Current in Idle
VDDINT = 1.0 V,
fCCLK = 50 MHz,
TJ = 25°C,
ASF = 0.47
Nonautomotive 400 MHz1
Min
Typ
Max
2.4
2.0
1.74
1.62
0.4
0.4
0.56
0.18
10.0
50.0
30.0
30.0
10.0
10.0
10.0
412
812
22
35
44
All Other Devices2
Min
Typ
Max Unit
2.4
V
2.0
V
1.74
V
1.62
V
0.4 V
0.4 V
0.56 V
0.18 V
10.0 μA
50.0 μA
30.0 μA
30.0 μA
10.0 μA
10.0 μA
10.0 μA
412
812 pF
37
mA
50
mA
59
mA
Rev. C | Page 36 of 100 | February 2010