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ADP1110AN-3.3 View Datasheet(PDF) - Analog Devices

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ADP1110AN-3.3 Datasheet PDF : 16 Pages
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APPLICATION CIRCUITS
All-Surface-Mount, Single-Cell to 5 V Converter
This is a very simple, compact, low-part-count circuit that takes
a single alkaline 1.5 V cell input and produces a 5 V output.
The output current should be kept to 10 mA or less to conserve
battery life.
ONE
ALKALINE
CELL
1.5V
L1
50µH
CTX50-4
1
2
ILIM
VIN SW1 3
ADP1110-5
SENSE 8
AO SET GND SW2
675 4
NC NC
D1
1N5817
+5V
10mA
CL
15µF
Figure 30. All-Surface-Mount, Single-Cell to 5 V Converter
All-Surface-Mount, 3 V to 5 V Step-Up Converter
Similar to the previous circuit, this circuit takes a 3-volt input
and provides a 5 V output at 40 mA. As in the single-cell version,
the circuit is compact and uses only four external components.
TWO
ALKALINE
CELLS
L1
220
50µH
CTX50-4
1
2
ILIM
VIN
SW1
3
3V ADP1110-5
SENSE 8
AO SET GND SW2
6 75 4
D1
1N5817
NC NC
+5V
40mA
CL
10µF
Figure 31. All-Surface-Mount, 3 V to 5 V Step-Up
Converter
All-Surface-Mount, 9 V to 5 V Step-Down Converter
Featuring the same low parts count of the step-up design, this
circuit is the complement to the preceding one. The 220
resistor programs the current limit to around 600 mA.
9V
BATTERY
RLIM
220
1
2
3
ILIM
VIN
SW1
SW2 4
ADP1110-5
SENSE 8
AO SET GND
675
D1
1N5817
L1
50µH
CTX50-4
+5V
40mA
CL
10µF
NC NC
Figure 32. All-Surface-Mount, 9 V to 5 V Step-Down
Converter
ADP1110
1.5 V to ؎5 V Dual-Output Step-Up Converter
This circuit works from a single 1.5 V cell and provides simulta-
neous outputs of +5 V and –5 V. The accuracy of the negative
output suffers slightly because of the extra diode drop of around
0.4 V.
ONE
ALKALINE
CELL
1.5V
L16
8µH
CTX68-4
1
2
ILIM
VIN SW1 3
ADP1110-5
SENSE 8
AO SET GND SW2
6 75 4
4.7µF
NC NC
4.7µF
+5V
3mA
–5V
3mA
4.7µF
NOTE: ALL DIODES 1N5818
Figure 33. 1.5 V to ±5 V Dual-Output Step-Up
Converter
All-Surface-Mount Flash Memory VPP Generator
Figure 34 shows a circuit that can generate the programming
voltage, VPP to program flash memory. The key components
are the MOSFET and the bipolar transistor. These two devices
form a switch that, when ON, allows the ADP1110 to power-up
and function as a step-up converter. The output is +12 V at 120
mA. When the MOSFET switch is OFF, the output of the
circuit drops to just under +5 V thereby disabling the program-
ming capability.
Care should be taken so there is no short-circuit-current limiting
in the circuit in either operating mode.
L1
50µH
MMBT4403
+5V
CTX50-4
10k
1
2
ILIM
VIN
SW1
3
1k
ADP1110-12
SENSE 8
AO SET GND SW2
6 75 4
MMBF170
LOGIC1 = PROGRAM
LOGIC0 = SHUTDOWN
NC NC
D1
1N5818
VPP
+12V
120mA
CL
10µF
Figure 34. All Surface-Mount Flash Memory VPP Generator
REV. 0
–13–
 

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