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ADF4360-5BCP Integrated Synthesizer and VCO ADI
Analog Devices ADI
ADF4360-5BCP Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ADF4360-5
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
AVDD to GND1
AVDD to DVDD
VVCO to GND
VVCO to AVDD
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REFIN to GND
Operating Temperature Range
Maximum Junction Temperature
CSP θJA Thermal Impedance
Paddle Soldered
Paddle Not Soldered
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
150°C
50°C/W
88°C/W
215°C
220°C
1 GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rat-
ing only; functional operation of the device at these or any
other conditions above those included in the operational sec-
tions of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar).
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features proprie-
tary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic
discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.
Rev. A | Page 6 of 24
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