ACT30AYT View Datasheet(PDF) - Active-Semi, Inc
Part Name
Description
View to exact match
ACT30AYT Datasheet PDF : 10 Pages
| |||
Active-Semi
ACT30
Rev 5, 05-Jun-09
APPLICATIONS INFORMATION
External Power Transistor
The ACT30 allows a low-cost high voltage power
NPN transistor such as ‘13003 or ‘13002 to be used
safely in a flyback configuration. The required
collector voltage rating for VAC = 265V with full
output load is at least 600V to 700V. As seen in
Figure 4, the breakdown voltage of an NPN is
significantly improved when it is driven at its emitter.
Thus, the ACT30 and ’13002 or ‘13003 combination
meet the necessary breakdown safety requirement
even though RCC circuits using ‘13002 or ‘13003
do not. Table 1 lists the breakdown voltage of some
transistors appropriate for use with the ACT30.
Table 1:
Recommended Power Transistor List
DEVICE VCBO VCEO IC hFEMIN PACKAGE
MJE13002 600V 300V 1.5A 8
TO-126
MJE13003,
KSE13003
700V
400V
1.5A
8
TO-126
STX13003 700V 400V 1A 8
TO-92
Figure 4:
NPN Reverse Bias Safe Operation Area
IC
Base-Drive
Safe Region
(RCC)
Emitter-Drive
Safe Region
(ACT30)
VCEO
VCBO
VC
The power dissipated in the NPN transistor is equal
to the collector current times the collector-emitter
voltage. As a result, the transistor must always be
in saturation when turned on to prevent excessive
power dissipation. Select an NPN transistor with
sufficiently high current gain (hFEMIN > 8) and a base
drive resistor (R2 in Figure 1) low enough to ensure
that the transistor easily saturates.
Figure 5:
A 3.75W Charger Using ACT30A in Combination with TL431
F1
AC1
D4
D1
L1
D3
D2
AC2
C1
R1
R2B
C2
C4
R3
C19
R6
D5
R2A
D6
R5
T1
EE-16
D7
R7
Z1
IC2B Opto
1
IC1
3
ACT30A
C10 R18
D8
L2
5V/750mA
R9 R10
C7
IC2A
Opto
R11
C9
R13
C8
IC3
TL431
Q2
R12
R16
R15
R14
GND
R8
C6
C3
C20
C5
Innovative PowerTM
-7-
ActiveSwitcherTM is a trademark of Active-Semi.
www.active-semi.com
Copyright © 2009 Active-Semi, Inc.
|
|
Share Link: 