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2SD2114S View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
View to exact match
2SD2114S Datasheet PDF : 4 Pages
1 2 3 4
Transistors
2SD2114K / 2SD2144S
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
zFeatures
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Units : mm)
2SD2114K
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1+−00..21
0.8±0.1
00.1
ROHM : SMT3
EIAJ : SC-59
(3)
0.4
+0.1
0.05
0.15−+00..016
All terminals have same dimensions
Abbreviated symbol: BB
(1) Emitter
(2) Base
(3) Collector
2SD2144S
4±0.2
2±0.2
ROHM : SPT
EIAJ : SC-72
Denotes hFE
0.45+−00..1055
2.5+−00..41
5
(1) (2) (3)
0.5 0.45−+00..0155
(1) Emitter
(2) Collector
(3) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power 2SD2114K
dissipation
2SD2144S
Junction temperature
Storage temperature
Single pulse Pw=100ms
PC
Tj
Tstg
Limits
25
20
12
0.5
1
0.2
0.3
150
55∼+150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
 

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