datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

FDG6335N View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FDG6335N
Fairchild
Fairchild Semiconductor Fairchild
FDG6335N Datasheet PDF : 5 Pages
1 2 3 4 5
October 2001
FDG6335N
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
DC/DC converter
Power management
Loadswitch
Features
0.7 A, 20 V.
RDS(ON) = 300 m@ VGS = 4.5 V
RDS(ON) = 400 m@ VGS = 2.5 V
Low gate charge (1.1 nC typical)
High performance trench technology for extremely
low RDS(ON)
Compact industry standard SC70-6 surface mount
package
S
G
D
S 1 or 4
Pin 1
D
G
S
G 2 or 5
D 3 or 6
SC70-6
Dual N-Channel
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6 or 3 D
5 or 2 G
4 or 1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.35
FDG6335N
7’’
Ratings
20
± 12
0.7
2.1
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDG6335N Rev C (W)
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]