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78M6612 View Datasheet(PDF) - Maxim Integrated

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DS_6612_001
78M6612 Data Sheet
4.5 Timing Specifications
4.5.1 RAM and Flash Memory
Table 22: RAM and Flash Memory Specifications
Parameter
CE DRAM wait states
Flash Read Pulse Width
Flash write cycles
Flash data retention
Flash data retention
Flash byte writes between page or
mass erase operations
Condition
Min Typ
CKMPU = 4.9152 MHz
5
CKMPU = 1.25 MHz
2
CKMPU = 614 kHz
1
V3P3A=V3P3SYS=0
BROWNOUT MODE
30
-40 °C to +85 °C
20,000
25 °C
100
85 °C
10
Max Unit
Cycles
Cycles
Cycles
100
ns
Cycles
Years
Years
2
Cycles
4.5.2 Flash Memory Timing
Table 23: Flash Memory Timing Specifications
Parameter
Write Time per Byte
Page Erase (512 bytes)
Mass Erase
Condition
Min Typ Max Unit
42
µs
20
ms
200
ms
4.5.3 EEPROM Interface
Table 24: EEPROM Interface Timing
Parameter
Write Clock frequency (I2C)
Write Clock frequency (3-wire)
Condition
Min Typ Max Unit
CKMPU=4.9152 MHz,
Using interrupts
78
kHz
CKMPU=4.9152 MHz,
“bit-banging” DIO4/5
150
kHz
CKMPU=4.9152 MHz
500
kHz
4.5.4 RESET and V1
Parameter
Reset pulse fall time
Reset pulse width
V1 Response Time
Table 25: RESET and V1 Timing
Condition
+100 mv overdrive
Min Typ Max Unit
1
µs
5
µs
10
37
100
µs
4.5.5 RTC
Parameter
Range for date
Table 26: RTC Range
Condition
Min Typ Max Unit
2000
2255 year
Rev 2
35
 

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