76629D View Datasheet(PDF) - Intersil

Part Name

Description

View to exact match

76629D

20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Intersil 

Data Sheet

HUF76629D3,HUF76629D3S

October 1999 File Number 4692.3

20A, 100V, 0.054 Ohm, N-Channel, Logic

Level UltraFET Power MOSFET

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

HUF76629D3

GATE

SOURCE

HUF76629D3S

Symbol

D

G

S

Features

• Ultra Low On-Resistance

- rDS(ON) = 0.052Ω, VGS = 10V

- rDS(ON) = 0.054Ω, VGS = 5V

• Simulation Models

- Temperature Compensated PSPICE® and SABER©

Electriecal Models

- Spice and SABER Thermal Impedance Models

- www.semi.harris.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs RGS Curves

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF76629D3

TO-251AA

76629D

HUF76629D3S

TO-252AA

76629D

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUF76629D3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUF76629D3, HUF76629D3S UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Drain Current

Continuous (TC= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous

Continuous

Continuous

(TC=

(TC=

(TC=

211500o00CooCC, V,, VVGGGSSS===1054VV.5))V().F.(igF.ui.gr.ue.r2e. ).2..)

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ID

ID

ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS

100

V

100

V

±16

V

20

A

20

A

20

A

20

A

Figure 4

Figures 6, 17, 18

Power Dissipation . . .

Derate Above 25oC

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PD

...

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

NOTES:

1. TJ = 25oC to 150oC.

110

0.74

-55 to 175

300

260

W

W/oC

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a registered trademark of MicroSim Corporation. UltraFET™ is a trademark of Intersil Corporation.

SABER is a Copyright of Analogy, Inc. 1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999.

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