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74VHC132M View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
74VHC132M QUAD 2-INPUT SCHMITT NAND GATE ST-Microelectronics
STMicroelectronics ST-Microelectronics
74VHC132M Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
74VHC132
DC SPECIFICATIONS
Symb ol
Parameter
Vt+ High Level Threshold
Voltage
Vt- Low Level Threshold
Voltage
Vh Hysteresis Voltage
VOH High Level Output
Voltage
VOL Low Level Output
Voltage
II Input Leakage Current
ICC Quiescent Supply
Current
Test Conditions
V CC
( V)
3 .0
4.5
5.5
3 .0
4.5
5.5
3 .0
4.5
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4 .5
3.0
4.5
0 to 5.5
5.5
IO=-50 µA
IO=-50 µA
IO=-50 µA
IO=-4 mA
IO=-8 mA
IO=50 µA
IO=50 µA
IO=50 µA
IO=4 mA
IO=8 mA
VI = 5.5V or GND
VI = VCC or GND
Value
TA = 25 oC
Min. Typ. Max.
2.2
3.15
3.85
0.9
1.35
1.65
0.3
1.2
0.4
1.4
0.5
1.6
1.9 2.0
2.9 3.0
4.4 4.5
2.58
3.94
0.0 0.1
0.0 0.1
0.0 0.1
0.36
0.36
±0.1
2
-40 to 85 oC
Min . Max.
2.2
3.15
3.85
0.9
1.35
1.65
0.3 1.2
0.4 1.4
0.5 1.6
1.9
2.9
4.4
2.48
3.8
0.1
0.1
0.1
0.44
0.44
±1.0
20
Un it
V
V
V
V
V
µA
µA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
Symb ol
Parameter
tPLH Propagation Delay
tPHL Time
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5V ± 0.5V
Test Condition
V CC
CL
( V)
(pF)
3.3(*)
15
3.3(*)
50
5.0(**)
15
5.0(**)
50
Value
TA = 25 oC
Min. Typ. Max.
7.6 11.9
10.1 15.4
4.9 7.7
6.4 9.7
-40 to 85 oC
Min . Max.
1.0 14.0
1.0 17.5
1.0 9.0
1.0 11.0
Unit
ns
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
Test Conditions
Value
Un it
TA = 25 oC
-40 to 85 oC
Min. Typ . Max. Min . Max.
CIN Input Capacitance
4
10
10
pF
CPD Power Dissipation
Capacitance (note 1)
16
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD VCC fIN + ICC/4 (per Gate)
3/7
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