74V1G05C View Datasheet(PDF) - STMicroelectronics
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Description
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74V1G05C Datasheet PDF : 7 Pages
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74V1G05
DC SPECIFICATIONS
Symb ol
Parameter
VIH High Level Input
Voltage
VIL Low Level Input
Voltage
VOL Low Level Output
Voltage
IOZ High Impedance
Output Leakage
Current
II Input Leakage Current
ICC Quiescent Supply
Current
Test Conditions
V CC
( V)
2 .0
3.0 to 5.5
2.0
3.0 to 5.5
2.0
3.0
4 .5
3.0
4.5
5 .5
IO=50 µA
IO=50 µA
IO=50 µA
IO=4 mA
IO=8 mA
VI = VIH or VIL
VO = VCC or GND
0 to 5.5
5.5
VI = 5.5V or GND
VI = VCC or GND
Value
TA = 25 oC
-40 to 85 oC
Min. Typ . Max. Min . Max.
1.5
1.5
0.7VCC
0.7VCC
0.5
0.5
0.3VCC
0.3VCC
0.0 0.1
0.1
0.0 0.1
0.1
0.0 0.1
0.1
0.36
0.44
0.36
0.44
±0.25
±2.5
±0.1
±1.0
2
20
Un it
V
V
V
µA
µA
µA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
Symbol
P ar am et e r
tPZL Propagation Delay
Time
tPLZ Propagation Delay
Time
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5V ± 0.5V
T est Conditio n
VCC
CL
( V)
(pF)
3.3(*)
3.3(*)
5.0(**)
5.0(**)
3.3(*)
5.0(**)
15 RL = 1 KΩ
50 RL = 1 KΩ
15 RL = 1 KΩ
50 RL = 1 KΩ
50 RL = 1 KΩ
50 RL = 1 KΩ
Valu e
TA = 25 oC
Min. T yp. Max.
5.5 7.9
8.0 11.4
3.7 5.5
5.2 7.5
9.0 11.4
6.0 7.5
-40 to 85 oC
Min. Max.
1.0 9.5
1.0 13.0
1.0 6.5
1.0 8.5
1.0 13.0
1.0 8.5
Unit
ns
ns
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
Test Conditions
Value
Un it
TA = 25 oC
-40 to 85 oC
Min. Typ . Max. Min . Max.
CIN Input Capacitance
4
10
10
pF
COUT Output Capacitance
5
pF
CPD Power Dissipation
Capacitance (note 1)
6
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC
3/7
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