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BR93LC56FV View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
View to exact match
BR93LC56FV
ROHM
ROHM Semiconductor ROHM
BR93LC56FV Datasheet PDF : 12 Pages
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Memory ICs
BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV
For low voltage operation (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)
Parameter
Symbol Min. Typ. Max. Unit
SK clock frequency
fSK
— 250 kHz
SK "H" time
tSKH
1
µs
SK "L" time
tSKL
1
µs
CS "L" time
tCS
1
µs
CS setup time
tCSS
200
ns
DI setup time
tDIS
400
ns
CS hold time
tCSH
0
ns
DI hold time
tDIH
400
ns
Data "1" output delay time
tPD1
2
µs
Data "0" output delay time
tPD0
2
µs
Time from CS to output confirmation
tSV
2
µs
Time from CS to output High impedance tDF
— 400 ns
Write cycle time
tE / W
25
ms
When reading at low voltage (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 2.0V)
Parameter
Symbol Min. Typ. Max. Unit
SK clock frequency
fSK
— 200 kHz
SK "H" time
tSKH
2
µs
SK "L" time
tSKL
2
µs
CS "L" time
tCS
2
µs
CS setup time
tCSS
400
ns
DI setup time
tDIS
800
ns
CS hold time
tCSH
0
ns
DI hold time
tDIH
800
ns
Data "1" output delay time
tPD1
4
µs
Data "0" output delay time
tPD0
4
µs
Time from CS to output High impedance tDF
— 800 ns
Not designed for radioactive rays.
5
 

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