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BR93LC56FV View Datasheet(PDF) - ROHM Semiconductor

Part NameBR93LC56FV ROHM
ROHM Semiconductor ROHM
Description2,048-Bit Serial Electrically Erasable PROM


BR93LC56FV Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Memory ICs
BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV
Block diagram
CS
Command decode
Control
Clock generation
SK
Power supply
voltage detector
Write
disable
High voltage
generator
Address
Address
7bit
Command
buffer
DI
decoder
7bit
register
2,048-bit
DO
Dummy bit
Data
register
16bit
R/W
amplifier
16bit
EEPROM array
Absolute maximum ratings (Ta = 25°C)
Parameter
Applied voltage
Power
dissipation
BR93LC56
BR93LC56F / RF
BR93LC56FV
Storage temperature
Operating temperature
Terminal voltage
Symbol
VCC
Pd
Tstg
Topr
Limits
Unit
– 0.3 ~ + 6.5
V
5001
3502
mW
3003
– 65 ~ + 125
°C
– 40 ~ + 85
°C
– 0.3 ~ VCC + 0.3
V
1 Reduced by 5.0mW for each increase in Ta of 1°C over 25°C.
2 Reduced by 3.5mW for each increase in Ta of 1°C over 25°C.
3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
Recommended operating conditions (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Power supply
voltage
Writing
Reading
VCC
2.7
5.5
2.0
5.5
V
V
Input voltage
VIN
0
VCC
V
2
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•Overview
The BR93LC56 is CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 128 words × 16 bits (2,048 bits), and each word can be accessed individually and data read from it and written to it.

•Features
• Low power CMOS technology
• 128 × 16 bit configuration
• 2.7V to 5.5V operation
• Low power dissipation
– 3mA (max.) active current: 5V
– 5µA (max.) standby current: 5V
• Auto increment for efficient data bump
• Automatic erase-before-write
• Hardware and software write protection
– Default to write-disabled state at power up
– Software instructions for write-enable / disable
– Vcc lock out inadvertent write protection
• 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages
• Device status signal during write cycle
• TTL compatible Input / Output
• 100,000 ERASE / write cycles
• 10 years Data Retention

 

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