BR93LC56F View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
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BR93LC56F Datasheet PDF : 12 Pages
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Memory ICs
2,048-Bit Serial Electrically Erasable PROM
BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV
•Features
• Low power CMOS technology
• 128 × 16 bit configuration
• 2.7V to 5.5V operation
• Low power dissipation
– 3mA (max.) active current: 5V
– 5µA (max.) standby current: 5V
• Auto increment for efficient data bump
• Automatic erase-before-write
• Hardware and software write protection
– Default to write-disabled state at power up
– Software instructions for write-enable / disable
– Vcc lock out inadvertent write protection
• 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages
• Device status signal during write cycle
• TTL compatible Input / Output
• 100,000 ERASE / write cycles
• 10 years Data Retention
•Pin assignments
CS 1
8 VCC
N.C. 1
8 N.C.
SK 2
DI 3
BR93LC56 /
BR93LC56RF
7 N.C.
6 N.C.
VCC 2
CS 3
BR93LC56F /
BR93LC56FV
7 GND
6 DO
DO 4
5 GND SK 4
5 DI
•Pin descriptions
Pin
name
Function
CS
SK
DI
DO
GND
N.C.
N.C.
VCC
Chip select input
Serial clock input
Start bit, operating code, address, and serial
data input
Serial data output, READY / BUSY internal
status display output
Ground
Not connected
Not connected
Power supply
•Overview
The BR93LC56 is CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically.
Each is configured of 128 words × 16 bits (2,048 bits), and each word can be accessed individually and data read
from it and written to it.
Operation control is performed using five types of commands. The commands, addresses, and data are input
through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or
BUSY) can be output from the DO pin.
The only difference between the BR93LC56 / F / RF / FV is the write disable voltage and its accompanying write
enable voltage. All other functions and characteristics are the same.
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