74LVC1G10 View Datasheet(PDF) - Diodes Incorporated.
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74LVC1G10 Datasheet PDF : 13 Pages
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74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Electrical Characteristics TA = -40°C to 125°C (All typical values are at VCC = 3.3V, TA = 25°C)
Symbol
VOH
VOL
II
IOFF
ICC
ΔICC
Ci
θJA
θJC
Parameter
Test Conditions
IOH = -100μA
IOH = -4mA
High Level Output
Voltage
IOH = -8mA
IOH = -16mA
IOH = -24mA
IOH = -32mA
IOL = 100μA
IOL = 4mA
High-level Input Voltage IOL = 8mA
IOL = 16mA
IOL = 24mA
IOL = 32mA
Input Current
VI = 5.5 V or GND
Power Down Leakage
Current
VI or VO = 5.5V
Supply Current
VI = 5.5V of GND
IO=0
Additional Supply
Current
Input at VCC –0.6V
Input Capacitance
Vi = VCC – or GND
SOT26
Thermal Resistance
Junction-to-Ambient
SOT363
DFN1410
DFN1010
SOT26
Thermal Resistance
Junction-to-Case
SOT363
DFN1410
DFN1010
VCC
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
0 to 5.5V
0
Min
VCC – 0.1
0.95
1.7
1.9
2.0
3.4
Typ.
1.65V to 5.5V
3V to 5.5V
3.3
4
204
371
(Note 4)
430
510
52
143
(Note 4)
190
250
Max Unit
V
0.1
0.70
0.45
V
0.60
0.80
0.80
± 20
μA
± 20
μA
40
μA
5000 μA
pF
oC/W
oC/W
Package Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)
Symbol
Parameter
CI Input Capacitance
Thermal Resistance
θJA Junction-to-Ambient
Test Conditions
VI = VCC – or GND
SOT26
SOT363
DFN1410
DFN1010
VCC
3.3
(Note 4)
Min
Typ.
Max Unit
3.5
pF
204
371
430
oC/W
510
θJC
Thermal Resistance
Junction-to-Case
SOT26
SOT363
DFN1410
DFN1010
(Note 4)
52
143
190
oC/W
250
Notes: 4. Test condition for SOT26, SOT363, DFN1410 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
74LVC1G10
Document number: DS35121 Rev. 3 - 2
5 of 13
www.diodes.com
July 2011
© Diodes Incorporated
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