74HCT2G04 View Datasheet(PDF) - NXP Semiconductors.
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74HCT2G04 Datasheet PDF : 14 Pages
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NXP Semiconductors
74HC2G04; 74HCT2G04
Dual inverter
Table 8. Static characteristics for 74HCT2G04 …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = −40 °C to +125 °C
VIH
HIGH-level input voltage
VCC = 4.5 V to 5.5 V
2.0
-
-
V
VIL
LOW-level input voltage
VCC = 4.5 V to 5.5 V
-
-
0.8
V
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA; VCC = 4.5 V
IO = −4.0 mA; VCC = 4.5 V
4.4
-
-
V
3.7
-
-
V
VOL
LOW-level output voltage VI = VIH or VIL
IO = 20 µA; VCC = 4.5 V
-
-
0.1
V
IO = 4.0 mA; VCC = 4.5 V
-
-
0.4
V
Il
input leakage current
VI = GND or VCC; VCC = 5.5 V
-
-
±1.0
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 5.5 V
-
-
20.0
µA
∆ICC
additional supply current
VI = VCC − 2.1 V;
VCC = 4.5 V to 5.5 V; IO = 0 A
-
-
410
µA
11. Dynamic characteristics
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
25 °C
Min Typ Max
74HC2G04
tpd
propagation delay
tt
transition time
CPD
power dissipation
capacitance
nA to nY; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 6.0 V; CL = 50 pF
nY; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 6.0 V; CL = 50 pF
VI = GND to VCC
[1]
-
-
-
[2]
-
-
-
[3] -
22 75
8 15
6 13
18 75
6 15
5 13
9
-
−40 °C to +125 °C Unit
Min Max
Max
(85 °C) (125 °C)
-
90
110 ns
-
18
22 ns
-
16
20 ns
-
95
125 ns
-
19
25 ns
-
16
20 ns
-
-
- pF
74HC_HCT2G04_1
Product data sheet
Rev. 01 — 15 November 2006
© NXP B.V. 2006. All rights reserved.
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