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74HCT32DR View Datasheet(PDF) - ON Semiconductor

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74HCT32DR Datasheet PDF : 8 Pages
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74HCT32
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
VCC
Guaranteed Limit
(V) 55 to 25°C 85°C 125°C Unit
VIH
Minimum HighLevel Input Voltage Vout = 0.1V
4.5
|Iout| 20mA
5.5
VIL
Maximum LowLevel Input Voltage Vout = VCC 0.1V
4.5
|Iout| 20mA
5.5
VOH
Minimum HighLevel Output
Vin = VIL
4.5
Voltage
|Iout| 20mA
5.5
Vin = VIL
|Iout| 4.0mA 4.5
VOL
Maximum LowLevel Output
Vin = VIH
4.5
Voltage
|Iout| 20mA
5.5
Vin = VIH
|Iout| 4.0mA 4.5
Iin
Maximum Input Leakage Current
Vin = VCC or GND
5.5
ICC
Maximum Quiescent Supply
Vin = VCC or GND
5.5
Current (per Package)
Iout = 0mA
2.0
2.0
0.8
0.8
4.4
5.4
3.98
0.1
0.1
0.26
±0.1
2.0
2.0
2.0
V
2.0
2.0
0.8
0.8
V
0.8
0.8
4.4
4.4
V
5.4
5.4
3.84 3.70
0.1
0.1
V
0.1
0.1
0.33 0.40
±1.0
±1.0
mA
20
40
mA
DICC
Additional Quiescent Supply
Current
Vin = 2.4V, Any One Input
55°C
Vin = VCC or GND, Other Inputs
Iout = 0mA
5.5
2.9
25 to 125°C
2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + ΣDICC.
AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)
Symbol
Parameter
Guaranteed Limit
VCC
(V) 55 to 25°C 85°C
125°C Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
4.5
15
19
22
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
4.5
15
19
22
ns
Cin
Maximum Input Capacitance
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor HighSpeed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V, VEE = 0 V
CPD
Power Dissipation Capacitance (Per Buffer)*
20
pF
* Used to determine the noload dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
http://onsemi.com
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