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74HCT2G66 View Datasheet(PDF) -

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74HCT2G66
 
74HCT2G66 Datasheet PDF : 0 Pages
NXP Semiconductors
74HC2G66; 74HCT2G66
Dual single-pole single-throw analog switch
tW
VI 90 %
negative
pulse
VM
10 %
0V
tf
VI
positive
pulse
tr
90 %
VM
10 %
0V
tW
VM
tr
tf
VM
VI
G
VCC
VO
DUT
RT
VCC
RL S1
CL
open
001aad983
Test data is given in Table 11.
Definitions for test circuit:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
RL = Load resistance.
S1 = Test selection switch.
Fig 11. Test circuit for measuring switching times
Table 11. Test data
Type
Input
74HC2G66
74HCT2G66
VI
GND to VCC
GND to 3 V
tr, tf[1]
6 ns
6 ns
Load
CL
50 pF
50 pF
RL
1 kΩ
1 kΩ
[1] There is no constraint on tr, tf with a 50 % duty factor when measuring fmax.
S1 position
tPHL, tPLH
open
open
tPZH, tPHZ
GND
GND
tPZL, tPLZ
VCC
VCC
11.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics for 74HC2G66 and 74HCT2G66
GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF; unless otherwise specified. All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
Min
Typ
Max Unit
THD
total harmonic
fi = 1 kHz; RL = 10 kΩ; see Figure 12
distortion
VCC = 4.5 V; VI = 4.0 V (p-p)
-
%
0.04
-
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.02
-
%
fi = 10 kHz; RL = 10 kΩ; see Figure 12
VCC = 4.5 V; VI = 4.0 V (p-p)
-
0.12
-
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.06
-
%
74HC_HCT2G66_6
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 06 — 2 April 2010
© NXP B.V. 2010. All rights reserved.
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