74HCT2G34GV View Datasheet(PDF) - NXP Semiconductors.
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74HCT2G34GV Datasheet PDF : 14 Pages
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NXP Semiconductors
74HC2G34; 74HCT2G34
Dual buffer gate
Table 9. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
25 °C
Min Typ Max
74HCT2G34
tpd
propagation delay
tt
transition time
CPD
power dissipation
capacitance
nA to nY; see Figure 5
VCC = 4.5 V; CL = 50 pF
nY; see Figure 5
VCC = 4.5 V; CL = 50 pF
VI = GND to VCC − 1.5 V
[1]
-
[2]
-
[3] -
10 18
6 15
9
-
−40 °C to +125 °C Unit
Min Max
Max
(85 °C) (125 °C)
-
23
29 ns
-
19
25 ns
-
-
- pF
[1] tpd is the same as tPLH and tPHL
[2] tt is the same as tTLH and tTHL
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
12. Waveforms
VI
nA input
GND
VM
tPLH
VM
tPHL
VOH
nY output
VOL
10 %
90 %
tTLH
90 %
10 %
tTHL
001aaf302
Measurement points are given in Table 10.
VOL and VOH are typical voltage output drop that occur with the output load.
Fig 5. The data input (nA) to output (nY) propagation delays and output transition times
Table 10. Measurement points
Type
Input
74HC2G34
74HCT2G34
VM
0.5VCC
1.3 V
VI
GND to VCC
GND to 3.0 V
tr = tf
6.0 ns
6.0 ns
Output
VM
0.5VCC
1.3 V
74HC_HCT2G34_1
Product data sheet
Rev. 01 — 6 October 2006
© NXP B.V. 2006. All rights reserved.
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