74HCT2G08DP View Datasheet(PDF) - NXP Semiconductors.
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74HCT2G08DP Datasheet PDF : 14 Pages
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NXP Semiconductors
74HC2G08; 74HCT2G08
Dual 2-input AND gate
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ[1] Max
74HCT2G08
tpd
propagation delay nA and nB to nY; see Figure 6
[2]
VCC = 4.5 V
-
14
30
VCC = 5.0 V; CL = 15 pF
tt
transition time
VCC = 4.5 V; see Figure 6
CPD
power dissipation VI = GND to VCC − 1.5 V
capacitance
-
[3]
-
[4]
-
14
-
7
19
10
-
−40 °C to +125 °C Unit
Min
Max
-
36 ns
-
-
ns
-
22 ns
-
-
pF
[1] All typical values are measured at Tamb = 25 °C.
[2] tpd is the same as tPLH and tPHL.
[3] tt is the same as tTLH and tTHL.
[4] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of outputs.
12. Waveforms
VI
nA, nB input
GND
VOH
nY output
VOL
VM
tPHL
VY
tTHL
VM
VX
tPLH
tTLH
001aak020
Fig 6.
Measurement points are given in Table 9.
VOL and VOH are typical output voltage levels that occur with the output load.
Propagation delay data input (nA, nB) to data output (nY) and transition time output (nY)
Table 9. Measurement points
Type
Input
74HC2G08
74HCT2G08
VM
0.5VCC
1.3 V
Output
VM
0.5VCC
1.3 V
VX
0.1VCC
0.1VCC
VY
0.9VCC
0.9VCC
74HC_HCT2G08_4
Product data sheet
Rev. 04 — 7 May 2009
© NXP B.V. 2009. All rights reserved.
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