74HCT299 View Datasheet(PDF) - NXP Semiconductors.
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74HCT299 Datasheet PDF : 24 Pages
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NXP Semiconductors
74HC299; 74HCT299
8-bit universal shift register; 3-state
Table 6. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 °C
−40 °C to
+85 °C
Min Typ Max Min Max
VIL
LOW-level
VCC = 4.5 V to 5.5 V
input voltage
- 1.2 0.8 - 0.8
VOH
HIGH-level
VI = VIH or VIL; VCC = 4.5 V
output voltage
all outputs
IO = −20 µA
standard outputs
4.4 4.5 - 4.4 -
IO = −4.0 mA
bus driver outputs
3.98 4.32 - 3.84 -
IO = −6.0 mA
3.98 4.32 - 3.84 -
VOL
LOW-level
VI = VIH or VIL; VCC = 4.5 V
output voltage
all outputs
IO = 20 µA
standard outputs
-
0 0.1 - 0.1
IO = 4.0 mA
bus driver outputs
- 0.15 0.26 - 0.33
II
IOZ
ICC
∆ICC
input leakage
current
OFF-state output
current
supply current
additional supply
current
IO = 6.0 mA
VI = VCC or GND;
VCC = 5.5 V
VI = VIH or VIL; VO = VCC or
GND per input pin; other
inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
per input pin;
VI = VCC − 2.1 V;
other inputs at VCC or
GND; IO = 0 A;
VCC = 4.5 V to 5.5 V
I/On, DSR, DSL, MR
and S1
- 0.16 0.26 - 0.33
-
- ±0.1 - ±1.0
-
- ±0.5 - ±5.0
-
-
8.0
-
80
-
25 90
- 112.5
CP, S0
-
60 216 - 270
OEn
-
30 108 - 135
CI
input capacitance
CI/O
input/output
capacitance
- 3.5 -
-
-
-
10
-
-
-
CPD
power dissipation per package
capacitance
[1] -
125
-
-
-
−40 °C to Unit
+125 °C
Min Max
- 0.8 V
4.4 - V
3.7 - V
3.7 - V
- 0.1 V
- 0.4 V
- 0.4 V
- ±1.0 µA
- ±10.0 µA
- 160 µA
- 122.5 µA
- 294 µA
- 147 µA
-
- pF
-
- pF
-
- pF
[1] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
74HC_HCT299_3
Product data sheet
Rev. 03 — 28 July 2008
© NXP B.V. 2008. All rights reserved.
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