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74HCT3G04DC View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
74HCT3G04DC
Philips
Philips Electronics Philips
74HCT3G04DC Datasheet PDF : 17 Pages
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Philips Semiconductors
Inverter
Product specification
74HC3G04; 74HCT3G04
FEATURES
Wide supply voltage range from 2.0 to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Very small 8 pins package
Output capability: standard
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
DESCRIPTION
The 74HC3G/HCT3G04 is a high-speed Si-gate CMOS
device and is pin compatible with low power Schottky
TTL (LSTTL). Specified in compliance with JEDEC
standard no. 7.
The 74HC3G/HCT3G04 provides three inverting buffers.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf 6.0 ns.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC3G04 HCT3G04
tPHL/tPLH propagation delay nA to nY
CL = 50 pF; VCC = 4.5 V 8
10
ns
CI
input capacitance
1.5
1.5
pF
CPD
power dissipation capacitance per buffer notes 1 and 2
9
9
pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total switching outputs;
(CL × VCC2 × fo) = sum of outputs.
2. For HC3G04 the condition is VI = GND to VCC.
For HCT3G04 the condition is VI = GND to VCC 1.5 V.
FUNCTION TABLE
See note 1.
INPUT
nA
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUT
nY
H
L
2003 Oct 30
2
 

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