74HCT2G08DP View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
74HCT2G08DP Datasheet PDF : 16 Pages
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Philips Semiconductors
Dual 2-input AND gate
Product specification
74HC2G08; 74HCT2G08
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
OTHER
VCC (V)
Tamb = −40 to +125 °C
VIH
HIGH-level input voltage
2.0
1.5
4.5
3.15
6.0
4.2
VIL
LOW-level input voltage
2.0
−
4.5
−
6.0
−
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
2.0
1.9
IO = −20 µA
4.5
4.4
IO = −20 µA
6.0
5.9
IO = −4.0 mA
4.5
3.7
IO = −5.2 mA
6.0
5.2
VOL
LOW-level output voltage VI = VIH or VIL
IO = 20 µA
2.0
−
IO = 20 µA
4.5
−
IO = 20 µA
6.0
−
IO = 4.0 mA
4.5
−
IO = 5.2 mA
6.0
−
ILI
input leakage current
VI = VCC or GND
6.0
−
ICC
quiescent supply current VI = VCC or GND; IO = 0 6.0
−
Note
1. All typical values are measured at Tamb = 25 °C.
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
−
V
−
V
−
V
0.5
V
1.35 V
1.8
V
−
V
−
V
−
V
−
V
−
V
0.1
V
0.1
V
0.1
V
0.4
V
0.4
V
±1.0 µA
20
µA
2003 Oct 22
7
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