74HC1G08 View Datasheet(PDF) - NXP Semiconductors.
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74HC1G08 Datasheet PDF : 11 Pages
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NXP Semiconductors
74HC1G08; 74HCT1G08
2-input AND gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Min Typ Max Min
Max
ICC
supply current
VI = VCC or GND; IO = 0 A;
-
-
10
-
20
VCC = 5.5 V
∆ICC
additional supply
per input; VCC = 4.5 V to 5.5 V;
-
- 500
-
850
current
VI = VCC − 2.1 V; IO = 0 A
CI
input capacitance
-
1.5
-
-
-
Unit
µA
µA
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf ≤ 6.0 ns; All typical values are measured at Tamb = 25 °C. For test circuit see Figure 6
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min Typ Max Min
Max
For type 74HC1G08
tpd
propagation delay A and B to Y; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V; CL = 50 pF
CPD
power dissipation VI = GND to VCC
capacitance
[1]
-
-
-
-
[2]
-
25
115
-
9
23
-
7
-
-
8
20
-
19
-
-
135 ns
27 ns
-
ns
23 ns
-
pF
For type 74HCT1G08
tpd
propagation delay A and B to Y; see Figure 5
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
CPD
power dissipation VI = GND to VCC − 1.5 V
capacitance
[1]
-
11
23
-
-
11
-
-
[2]
-
21
-
-
27 ns
-
ns
-
pF
[1] tpd is the same as tPLH and tPHL.
[2] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz
fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
∑ (CL × VCC2 × fo) = sum of outputs
74HC_HCT1G08_4
Product data sheet
Rev. 04 — 17 July 2007
© NXP B.V. 2007. All rights reserved.
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