74HC02N View Datasheet(PDF) - NXP Semiconductors.
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74HC02N Datasheet PDF : 16 Pages
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NXP Semiconductors
74HC02; 74HCT02
Quad 2-input NOR gate
Table 6. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Min
Max
74HCT02
VIH
HIGH-level
VCC = 4.5 V to 5.5 V
input voltage
2.0 1.6 -
2.0
-
2.0
-
V
VIL
LOW-level
VCC = 4.5 V to 5.5 V
input voltage
-
1.2 0.8 -
0.8
-
0.8
V
VOH
HIGH-level
VI = VIH or VIL; VCC = 4.5 V
output voltage
IO = 20 A
4.4 4.5 -
4.4
-
4.4
IO = 4.0 mA
3.98 4.32 -
3.84 -
3.7
VOL
LOW-level
VI = VIH or VIL; VCC = 4.5 V
output voltage
IO = 20 A
-
0
0.1 -
0.1
-
IO = 5.2 mA
-
0.15 0.26 -
0.33 -
II
input leakage VI = VCC or GND;
current
VCC = 5.5 V
-
-
0.1 -
1
-
ICC
supply current VI = VCC or GND; IO = 0 A; -
-
2.0 -
VCC = 5.5 V
20
-
ICC
additional
supply current
per input pin;
-
VI = VCC 2.1 V; IO = 0 A;
other inputs at VCC or GND;
VCC = 4.5 V to 5.5 V
150 540 -
675 -
CI
input
capacitance
-
3.5 -
-
-
-
-
V
-
V
0.1
V
0.4
V
1
A
40
A
735
A
-
pF
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; CL = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
74HC02
tpd
propagation delay nA, nB to nY; see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V
tt
transition time
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
CPD
power dissipation per package; VI = GND to VCC
capacitance
25 C
40 C to +125 C Unit
Min Typ Max Max
Max
(85 C) (125 C)
[1]
-
-
-
-
[2]
-
-
-
[3]
-
25
90
115
9
18
23
7
-
-
7
15
20
19
75
95
7
15
19
6
13
16
22
-
-
135 ns
27 ns
- ns
23 ns
110 ns
22 ns
19 ns
- pF
74HC_HCT02
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 September 2012
© NXP B.V. 2012. All rights reserved.
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