74HCT03PW View Datasheet(PDF) - Philips Electronics
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Description
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74HCT03PW Datasheet PDF : 8 Pages
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Philips Semiconductors
Quad 2-input NAND gate
Product specification
74HC/HCT03
DC CHARACTERISTICS FOR 74HC
For the DC characteristics see “74HC/HCT/HCU/HCMOS Logic Family Specifications”, except that the VOH values are
not valid for open drain. They are replaced by IOZ as given below.
Output capability: standard (open drain), excepting VOH
ICC category: SSI
Voltages are referenced to GND (ground = 0 V)
SYMBOL
IOZ
PARAMETER
HIGH level output
leakage current
min.
+25
typ.
Tamb (°C)
74HC
−40 to +85 −40 to +125
max. min. max. min. max.
0.5
5.0
10.0
TEST CONDITIONS
UNIT VCC VI OTHER
(V)
2.0
VO = VO(max)(1)
µA to VIL or GND
6.0
Note
1. The maximum operating output voltage (VO(max)) is 6.0 V.
AC CHARACTERISTICS FOR 74HC
GND = 0 V; tr = tf = 6 ns; CL = 50 pF
Tamb (°C)
SYMBOL PARAMETER
74HC
+25
−40 to +85
min. typ. max. min. max.
tPZL/
tPLZ
propagation delay
nA, nB to nY
28 95
120
10 19
24
8 16
20
tTHL
output transition time
19 75
95
7 15
19
6 13
16
TEST CONDITIONS
−40 to +125
UNIT VCC WAVEFORMS
(V)
min. max.
145
29 ns
25
2.0 Fig.6
4.5
6.0
110 ns
22
19
2.0
4.5 Fig.6
6.0
December 1990
5
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