74ALVC00PW View Datasheet(PDF) - Philips Electronics

Part Name

Description

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74ALVC00PW

Quad 2-input NAND gate

Philips Electronics 

Philips Semiconductors

Quad 2-input NAND gate

Product specification

74ALVC00

FEATURES

• Wide supply voltage range from 1.65 to 3.6 V

• 3.6 V tolerant inputs/outputs

• CMOS low power consumption

• Direct interface with TTL levels (2.7 to 3.6 V)

• Power-down mode

• Latch-up performance exceeds 250 mA

• Complies with JEDEC standard:

JESD8-7 (1.65 to 1.95 V)

JESD8-5 (2.3 to 2.7 V)

JESD8B/JESD36 (2.7 to 3.6 V).

• ESD protection:

HBM EIA/JESD22-A114-A exceeds 2000 V

MM EIA/JESD22-A115-A exceeds 200 V.

DESCRIPTION

The 74ALVC00 is a high-performance, low-power,

low-voltage, Si-gate CMOS device and superior to most

advanced CMOS compatible TTL families.

Schmitt-trigger action at all inputs makes the circuit

tolerant for slower input rise and fall times.

The 74ALVC00 provides the 2-input NAND function.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C.

SYMBOL

tPHL/tPLH

CI

CPD

PARAMETER

CONDITIONS

propagation delay inputs

nA, nB to output nY

input capacitance

VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ

VCC = 2.5 V; CL = 30 pF; RL = 500 Ω

VCC = 2.7 V; CL = 50 pF; RL = 500 Ω

VCC = 3.3 V; CL = 50 pF; RL = 500 Ω

power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2

TYPICAL UNIT

2.8

ns

2.1

ns

2.6

ns

2.1

ns

3.5

pF

28

pF

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts;

N = total load switching outputs;

Σ(CL × VCC2 × fo) = sum of the outputs.

2. The condition is VI = GND to VCC.

2003 May 14

2

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