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74AHC30 View Datasheet(PDF) - NXP Semiconductors.

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Description
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74AHC30
NXP
NXP Semiconductors. NXP
74AHC30 Datasheet PDF : 14 Pages
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NXP Semiconductors
74AHC30; 74AHCT30
8-input NAND gate
6. Functional description
Table 3. Function table[1]
Input
Output
A
B
C
D
E
F
G
H
Y
L
X
X
X
X
X
X
X
H
X
L
X
X
X
X
X
X
H
X
X
L
X
X
X
X
X
H
X
X
X
L
X
X
X
X
H
X
X
X
X
L
X
X
X
H
X
X
X
X
X
L
X
X
H
X
X
X
X
X
X
L
X
H
X
X
X
X
X
X
X
L
H
H
H
H
H
H
H
H
H
L
[1] H = HIGH voltage level;
L = LOW voltage level;
X = don’t care.
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
VI
input voltage
IIK
input clamping current
IOK
output clamping current
IO
output current
VI < 0.5 V
VO < 0.5 V or VO > VCC + 0.5 V
VO = 0.5 V to (VCC + 0.5 V)
0.5
+7.0
V
0.5
+7.0
V
[1] 20
-
mA
[1] 20
+20
mA
25
+25
mA
ICC
IGND
Tstg
Ptot
supply current
ground current
storage temperature
total power dissipation
Tamb = 40 °C to +125 °C
-
75
65
[2] -
+75
mA
-
mA
+150
°C
500
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SO14 packages: above 70 °C the value of Ptot derates linearly at 8 mW/K.
For TSSOP14 packages: above 60 °C the value of Ptot derates linearly at 5.5 mW/K.
For DHVQFN14 packages: above 60 °C the value of Ptot derates linearly at 4.5 mW/K.
74AHC_AHCT30_3
Product data sheet
Rev. 03 — 26 June 2009
© NXP B.V. 2009. All rights reserved.
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