74AHC1G66GW View Datasheet(PDF) - NXP Semiconductors.
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Description
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74AHC1G66GW Datasheet PDF : 17 Pages
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NXP Semiconductors
74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch
VI 90 %
tW
negative
pulse
VM
10 %
0V
tf
VI
positive
pulse
tr
90 %
VM
10 %
0V
tW
VM
tr
tf
VM
VI
G
VCC
VO
DUT
RT
VCC
RL S1
CL
open
001aad983
Test data is given in Table 11.
Definitions for test circuit:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
RL = Load resistance.
S1 = Test selection switch.
Fig 10. Test circuit for measuring switching times
Table 11. Test data
Type
Input
VI
tr, tf
74AHC1G66 GND to VCC 3 ns
74AHCT1G66 GND to 3 V 3 ns
Load
CL
15 pF, 50 pF
15 pF, 50 pF
RL
1 kΩ
1 kΩ
S1 position
tPHL, tPLH
open
open
tPZH, tPHZ
GND
GND
tPZL, tPLZ
VCC
VCC
11.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics for 74AHC1G66 and 74AHCT1G66
GND = 0 V; tr = tf = 3.0 ns; CL = 50 pF; unless otherwise specified. All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
Min
Typ
Max Unit
THD
total harmonic
distortion
fi = 1 kHz; RL = 10 kΩ; see Figure 11
VCC = 3.0 V to 3.6 V
-
VCC = 4.5 V to 5.5 V
-
fi = 10 kHz; RL = 10 kΩ; see Figure 11
0.025
-
%
0.015
-
%
VCC = 3.0 V to 3.6 V; VI = 2.5 V
-
0.025
-
%
VCC = 4.5 V to 5.5 V; VI = 4.0 V
-
0.015
-
%
74AHC_AHCT1G66_4
Product data sheet
Rev. 04 — 18 December 2008
© NXP B.V. 2008. All rights reserved.
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