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74AHC1G09GW View Datasheet(PDF) - NXP Semiconductors.

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Description
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74AHC1G09GW
NXP
NXP Semiconductors. NXP
74AHC1G09GW Datasheet PDF : 10 Pages
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NXP Semiconductors
74AHC1G09
2-input AND gate with open-drain output
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
VI
input voltage
VO
output voltage
active mode
high-impedance mode
0.5
+7.0
V
[1] 0.5
+7.0
V
[1] 0.5
+7.0
V
[1] 0.5
+7.0
V
IIK
IOK
IO
ICC
IGND
Tstg
Ptot
input clamping current
output clamping current
output current
supply current
GND current
storage temperature
total power dissipation
VI < 0.5 V
VO < 0.5 V
VO > 0.5 V
Tamb = 40 °C to +125 °C
[1] -
[1] -
-
-
-
65
[2] -
20
mA
±20
mA
25
mA
±75
mA
±75
mA
+150
°C
250
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP5 and SC-74A packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
VCC
VI
VO
Tamb
t/V
Recommended operating operations
Parameter
Conditions
supply voltage
input voltage
output voltage
active mode
high-impedance mode
ambient temperature
input transition rise and fall rate VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
10. Static characteristics
Min
Typ
Max
Unit
2.0
5.0
5.5
V
0
-
5.5
V
0
-
0
-
VCC
V
6.0
V
40
+25
+125 °C
-
-
100
ns/V
-
-
20
ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
VIH
HIGH-level VCC = 2.0 V
input voltage VCC = 3.0 V
VCC = 5.5 V
VIL
LOW-level VCC = 2.0 V
input voltage VCC = 3.0 V
VCC = 5.5 V
25 °C
Min Typ Max
1.5 -
-
2.1 -
-
3.85 -
-
- - 0.5
- - 0.9
- - 1.65
40 °C to +85 °C 40 °C to +125 °C Unit
Min Max
Min
Max
1.5
-
1.5
-
V
2.1
-
2.1
-
V
3.85
-
3.85
-
V
-
0.5
-
0.5 V
-
0.9
-
0.9 V
-
1.65
-
1.65 V
74AHC1G09_2
Product data sheet
Rev. 02 — 18 December 2007
© NXP B.V. 2007. All rights reserved.
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