74AHC1G08GW View Datasheet(PDF) - NXP Semiconductors.
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Description
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74AHC1G08GW Datasheet PDF : 11 Pages
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NXP Semiconductors
74AHC1G08; 74AHCT1G08
2-input AND gate
10. Static characteristics
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
For type 74AHC1G08
VIH
HIGH-level VCC = 2.0 V
input voltage VCC = 3.0 V
VCC = 5.5 V
VIL
LOW-level
VCC = 2.0 V
input voltage VCC = 3.0 V
VCC = 5.5 V
VOH
HIGH-level VI = VIH or VIL
output voltage IO = −50 µA; VCC = 2.0 V
IO = −50 µA; VCC = 3.0 V
IO = −50 µA; VCC = 4.5 V
IO = −4.0 mA; VCC = 3.0 V
IO = −8.0 mA; VCC = 4.5 V
VOL
LOW-level
VI = VIH or VIL
output voltage IO = 50 µA; VCC = 2.0 V
IO = 50 µA; VCC = 3.0 V
IO = 50 µA; VCC = 4.5 V
IO = 4.0 mA; VCC = 3.0 V
IO = 8.0 mA; VCC = 4.5 V
II
input leakage VI = 5.5 V or GND;
current
VCC = 0 V to 5.5 V
ICC
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
CI
input
capacitance
For type 74AHCT1G08
VIH
HIGH-level VCC = 4.5 V to 5.5 V
input voltage
VIL
LOW-level VCC = 4.5 V to 5.5 V
input voltage
VOH
HIGH-level VI = VIH or VIL; VCC = 4.5 V
output voltage IO = −50 µA
IO = −8.0 mA
VOL
LOW-level
VI = VIH or VIL; VCC = 4.5 V
output voltage IO = 50 µA
IO = 8.0 mA
II
input leakage VI = 5.5 V or GND;
current
VCC = 0 V to 5.5 V
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min
Max
Min
Max
1.5 -
-
1.5
-
1.5
-
V
2.1 -
-
2.1
-
2.1
-
V
3.85 -
- 3.85
-
3.85
-
V
-
- 0.5
-
0.5
-
0.5 V
-
- 0.9
-
0.9
-
0.9 V
-
- 1.65 -
1.65
-
1.65 V
1.9 2.0 -
1.9
-
1.9
-
V
2.9 3.0 -
2.9
-
2.9
-
V
4.4 4.5 -
4.4
-
4.4
-
V
2.58 -
- 2.48
-
2.40
-
V
3.94 -
-
3.8
-
3.70
-
V
-
0 0.1
-
0.1
-
0.1 V
-
0 0.1
-
0.1
-
0.1 V
-
0 0.1
-
0.1
-
0.1 V
-
- 0.36 -
0.44
-
0.55 V
-
- 0.36 -
0.44
-
0.55 V
-
- 0.1
-
1.0
-
2.0 µA
-
- 1.0
-
10
-
40 µA
- 1.5 10
-
10
-
10 pF
2.0 -
-
2.0
-
2.0
-
V
-
- 0.8
-
0.8
-
0.8 V
4.4 4.5 -
4.4
-
4.4
-
V
3.94 -
-
3.8
-
3.70
-
V
-
0 0.1
-
0.1
-
0.1 V
-
- 0.36 -
0.44
-
0.55 V
-
- 0.1
-
1.0
-
2.0 µA
74AHC_AHCT1G08_6
Product data sheet
Rev. 06 — 29 June 2007
© NXP B.V. 2007. All rights reserved.
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