74AHC00 View Datasheet(PDF) - NXP Semiconductors.
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74AHC00 Datasheet PDF : 13 Pages
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NXP Semiconductors
74AHC00; 74AHCT00
Quad 2-input NAND gate
Table 7. Dynamic characteristics …continued
GND = 0 V; For test circuit see Figure 7.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ[1] Max Min
Max
Min
Max
For type 74AHCT00
tpd
propagation nA, nB to nY; see Figure 6 [2]
delay
VCC = 4.5 V to 5.5 V
CL = 15 pF
- 3.3 6.9 1.0
8.0
1.0
9.0 ns
CL = 50 pF
- 4.5 7.9 1.0
9.0
1.0
10.0 ns
CPD
power
CL = 50 pF; fi = 1 MHz;
[3] -
7.0 -
-
-
-
-
pF
dissipation VI = GND to VCC
capacitance
[1] Typical values are measured at nominal supply voltage (VCC = 3.3 V and VCC = 5.0 V).
[2] tpd is the same as tPLH and tPHL.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz, fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
N = number of inputs switching
Σ(CL × VCC2 × fo) = sum of the outputs.
11. Waveforms
VI
nA, nB input
GND
VOH
nY output
VOL
VM
tPLH
VM
Measurement points are given in Table 8.
VOL and VOH are typical voltage output levels that occur with the output load.
Fig 6. The input (nA, nB) to output (nY) propagation delays
tPHL
001aah088
Table 8. Measurement points
Type
74AHC00
74AHCT00
Input
VM
0.5VCC
1.5 V
Output
VM
0.5VCC
0.5VCC
74AHC_AHCT00_3
Product data sheet
Rev. 03 — 8 January 2008
© NXP B.V. 2008. All rights reserved.
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