Q5962F9563003VYC View Datasheet(PDF) -

HS-1840ARH, HS-1840BRH

Die Characteristics

DIE DIMENSIONS:

(2820µmx4080µm x 483µm ±25.4μm)

111 milsx161 milsx19 mils ±1 mil

INTERFACE MATERIALS:

Glassivation:

Type: PSG (Phosphorus Silicon Glass)

Thickness: 8.0kÅ ±1kÅ

Top Metallization:

Type: AlSiCu

Thickness: 16.0kÅ ±2kÅ

Backside Finish:

Silicon

Metallization Mask Layout

HS-1840ARH, HS-1840BRH

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

Modified SEM

Transistor Count:

407

Process:

Radiation Hardened Silicon Gate,

Bonded Wafer, Dielectric Isolation

IN8

-V

OUT

+V

IN16

ENABLE

A0

A1

A2

A3

VREF

GND

5

FN4355.3

September 14, 2010

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