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NM27C010N120 View Datasheet(PDF) - National ->Texas Instruments

Part NameDescriptionManufacturer
NM27C010N120 1,048,576-Bit (128K x 8) High Performance CMOS EPROM National-Semiconductor
National ->Texas Instruments National-Semiconductor
NM27C010N120 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Capacitance TA e a25 C f e 1 MHz (Note 2)
Conditions Typ Max Units
Input Capacitance
VIN e 0V
Output Capacitance VOUT e 0V
AC Test Conditions
Output Load
Input Rise and Fall Times
Input Pulse Levels
1 TTL Gate and
CL e 100 pF (Note 8)
s5 ns
0 45V to 2 4V
AC Waveforms (Notes 6 7 9)
Timing Measurement Reference Level
0 8V and 2V
0 8V and 2V
TL D 10798 – 4
Note 1 Stresses above those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied Exposure to absolute
maximum rating conditions for extended periods may affect device reliability
Note 2 This parameter is only sampled and is not 100% tested
Note 3 OE may be delayed up to tACC b tOE after the falling edge of CE without impacting tACC
Note 4 The tDF and tCF compare level is determined as follows
High to TRI-STATE the measured VOH1 (DC) b 0 10V
Low to TRI-STATE the measured VOL1 (DC) a 0 10V
Note 5 TRI-STATE may be attained using OE or CE
Note 6 The power switching characteristics of EPROMs require careful device decoupling It is recommended that at least a 0 1 mF ceramic capacitor be used on
every device between VCC and GND
Note 7 The outputs must be restricted to VCC a 1 0V to avoid latch-up and device damage
Note 8 1 TTL Gate IOL e 1 6 mA IOH e b400 mA
CL 100 pF includes fixture capacitance
Note 9 VPP may be connected to VCC except during programming
Note 10 Inputs and outputs can undershoot to b2 0V for 20 ns Max
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