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NM27C010N120 View Datasheet(PDF) - National ->Texas Instruments

Part NameNM27C010N120 National-Semiconductor
National ->Texas Instruments National-Semiconductor
Description1,048,576-Bit (128K x 8) High Performance CMOS EPROM
NM27C010N120 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Absolute Maximum Ratings (Note 1)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Storage Temperature
b65 C to a150 C
All Input Voltages Except A9 with
Respect to Ground (Note 10)
b0 6V to a7V
VPP and A9 with Respect to Ground
VCC Supply Voltage with
Respect to Ground
b0 6V to a14V
b0 6V to a7V
ESD Protection
l2000V
All Output Voltages with
Respect to Ground (Note 10) VCC a 1 0V to GND b0 6V
Operating Range
Range
Commercial
Industrial
Military
Temperature
0 C to a70 C
b40 C to a85 C
b55 C to a125 C
VCC
a5V
a5V
a5V
Tolerance
g10%
g10%
g10%
DC Read Characteristics Over Operating Range with VPP e VCC
Symbol
Parameter
Test Conditions
VIL
Input Low Level
VIH
Input High Level
VOL
Output Low Voltage
VOH
Output High Voltage
ISB1
VCC Standby Current
(CMOS)
IOL e 2 1 mA
IOH e b2 5 mA
CE e VCC g0 3V
ISB2
VCC Standby Current (TTL)
CE e VIH
ICC
VCC Active Current
CE e OE e VIL
I O e 0 mA
f e 5 MHz
IPP
VPP Supply Current
VPP e VCC
VPP
VPP Read Voltage
ILI
Input Load Current
VIN e 5 5 or GND
ILO
Output Leakage Current
VOUT e 5 5V or GND
Min
b0 5
20
35
VCC b 0 7
b1
b10
Max
08
VCC a 1
04
100
1
30
10
VCC
1
10
AC Read Characteristics Over Operating Range with VPP e VCC
Symbol
Parameter
90
Min Max
120
Min Max
tACC
Address to Output Delay
90
120
tCE
CE to Output Delay
90
120
tOE
OE to Output Delay
40
50
tDF
(Note 2)
Output Disable to Output Float
35
35
tOH
Output Hold from Addresses
(Note 2) CE or OE Whichever
0
0
Occurred First
150
Min Max
150
150
50
45
0
200
Min Max
200
200
50
55
0
Units
V
V
V
V
mA
mA
mA
mA
V
mA
mA
Units
ns
3
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General Description
The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The ‘‘Don’t Care’’ feature during read operations allows memory expansions from 1M to 8M bits with no printed circuit board changes.
The NM27C010 can directly replace lower density 28-pin EPROMs by adding an A16 address line and VCC jumper. During the normal read operation PGM and VPP are in a ‘‘Don’t Care’’ state which allows higher order addresses, such as A17, A18, and A19 to be connected without affecting the normal read operation. This allows memory upgrades to 8M bits without hardware changes. The NM27C010 is also offered in a 32-pin plastic DIP with the same upgrade path.
The NM27C010 provides microprocessor-based systems extensive storage capacity for large portions of operating system and application software. Its 90 ns access time provides no-wait-state operation with high-performance CPUs. The NM27C010 offers a single chip solution for the code storage requirements of 100% firmware-based equipment. Frequently-used software routines are quickly executed from EPROM storage, greatly enhancing system utility.
The NM27C010 is manufactured using National’s advanced CMOS AMGTM EPROM technology.
The NM27C010 is one member of a high density EPROM Family which range in densities up to 4 Megabit.

Features
■ High performance CMOS
   - 90 ns access time
■ Fast turn-off for microprocessor compatibility
■ Simplified upgrade path
   - VPP and PGM are ‘‘Don’t Care’’ during normal read operation
■ Manufacturers identification code
■ Fast programming
■ JEDEC standard pin configurations
   - 32-pin DIP package
   - 32-pin PLCC package
   - 32-pin TSOP package

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