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3N253-E4/51 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
3N253-E4/51
Vishay
Vishay Semiconductors Vishay
3N253-E4/51 Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
2KBPxxM, 3N25x
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
2KBP005M 2KBP01M 2KBP02M 2KBP04M
SYMBOL
3N253
3N254
3N255
3N256
2KBP06M
3N257
2KBP08M
3N258
2KBP10M
UNIT
3N259
Typical thermal resistance
RθJA (1)
RθJL (1)
30
°C/W
11
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
2KBP06M-E4/51
1.895
3N257-E4/51
1.895
PACKAGE CODE
51
51
BASE QUANTITY
600
600
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE
Anti-static PVC tray
Anti-static PVC tray
2.0
60 Hz Resistive or
Inductive Load
1.5
P.C.B. Mounted
with 0.47 x 0.47"
(12 x 12 mm)
1.0
Copper Pads
Capacitive Load
0.5
I(pk)
I(AV)
=
5.0
10
(Per Leg) 20
0
20 40 60 80 100 120 140
Ambient Temperature (°C)
160 170
Fig. 1 - Derating Curve Output Rectified Current
100
10
1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
60
TJ = 150 °C
Single Sine-Wave
50
40
30
20
10
0
1
1.0 Cycle
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeCurrent
Per Diode
100
TJ = 125 °C
10
TJ = 100 °C
1
0.1
0.01
0
TJ = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 04-Jul-13
2
Document Number: 88532
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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