M29F102BB35K1F View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

M29F102BB35K1F

1 Mbit (64Kb x16, Boot Block) Single Supply Flash Memory

STMicroelectronics 

M29F102BB

Table 4. Commands

Bus Write Operations

Command

1st

2nd

3rd

4th

5th

6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset

1 X F0

3 555 AA 2AA 55 X F0

Auto Select

3 555 AA 2AA 55 555 90

Program

4 555 AA 2AA 55 555 A0 PA PD

Unlock Bypass

3 555 AA 2AA 55 555 20

Unlock Bypass

Program

2 X A0 PA PD

Unlock Bypass Reset 2 X 90 X 00

Chip Erase

6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

Block Erase

6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30

Erase Suspend

1 X B0

Erase Resume

1 X 30

Note: 1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.

2. All values in the table are in hexadecimal.

3. The Command Interface only uses address bits A0-A10 and DQ0-DQ7 to verify the commands, the upper address bits and the

upper data bits are Don’t Care.

4. Read/Reset.

5. After a Read/Reset command, read the memory as normal until another command is issued.

6. Auto Select.

7. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.

8. Program, Unlock Bypass Program, Chip Erase, Block Erase.

9. After these commands read the Status Register until the Program/Erase Controller completes and the memory returns to Read

Mode. Add additional Blocks during Block Erase Command with additional Bus Write Operations until the Timeout Bit is set.

10. Unlock Bypass.

11. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.

12. Unlock Bypass Reset.

13. After the Unlock Bypass Reset command read the memory as normal until another command is issued.

14. Erase Suspend.

15. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands on non-

erasing blocks as normal.

16. Erase Resume.

17. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/Erase Con-

troller completes and the memory returns to Read Mode.

Table 5. Program, Erase Times and Program, Erase Endurance Cycles (TA = 0 to 70°C)

Parameter

Min

Typ(1)

Typical after

100k W/E Cycles(1)

Max

Chip Erase (All bits in the memory set to ‘0’)

0.6

0.6

Chip Erase

1.3

1.3

6

Block Erase (32 KWords)

0.6

0.6

4

Program

8

8

150

Chip Program

0.6

0.6

2.5

Program/Erase Cycles (per Block)

100,000

Note: 1. TA = 25°C, VCC = 5V.

Unit

s

s

s

µs

s

cycles

10/24

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