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M29F010B120K1 View Datasheet(PDF) - STMicroelectronics

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M29F010B120K1 Datasheet PDF : 20 Pages
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M29F010B
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
PRELIMINARY DATA
s SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 45ns
s PROGRAMMING TIME
– 8µs per Byte typical
s 8 UNIFORM 16 Kbytes MEMORY BLOCKS
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 20h
PLCC32 (K)
TSOP32 (N)
8 x 20mm
32
1
PDIP32 (P)
Figure 1. Logic Diagram
VCC
17
A0-A16
8
DQ0-DQ7
W
M29F010B
E
G
VSS
AI02735
July 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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