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M29F100BB70M1T View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M29F100BB70M1T 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory ST-Microelectronics
STMicroelectronics ST-Microelectronics
M29F100BB70M1T Datasheet PDF : 22 Pages
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M29F100BT
M29F100BB
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)
Single Supply Flash Memory
s SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 45ns
s PROGRAMMING TIME
– 8µs per Byte/Word typical
s 5 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 2 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29F100BT: 00D0h
– Bottom Device Code M29F100BB: 00D1h
44
TSOP48 (N)
12 x 20mm
1
SO44 (M)
Figure 1. Logic Diagram
VCC
16
A0-A15
15
DQ0-DQ14
W
DQ15A–1
M29F100BT
E
M29F100BB
BYTE
G
RB
RP
VSS
AI02916
July 2000
1/22
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